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| VISHAY IL256AT Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, With Base Connection Features * Guaranteed CTR Symmetry, 2:1 Maximum * Bidirectional AC Input Industry Standard SOIC-8 Surface Mountable Package * Standard Lead Spacing, .05 " * Available only on Tape and Reel (Conform to EIA Standard RS481A) A/C C/A NC 1 2 3 8 NC 7B 6C 5E NC 4 Agency Approvals * UL File #E52744 System Code Y * CSA 93751 * DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * FIMKO i179025 The product is well suited for telecom applications such as ring detection or off/on hook status, given its bidirectional LED input and guaranteed current transfer ratio (CTR) minimum of 20 % at IF = 10 mA. Applications Telecom applications ring detection Order Information Part IL256AT Remarks CTR > 20 %, Tape and reel, SOIC-8 Description The IL256A is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in reverse parallel and coupled to a silicon NPN phototransistor detector. These circuit elements are constructed with a standard SOIC-8 foot print. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Forward continuous current Power dissipation Derate linearly from 25 C Test condition Symbol IF Pdiss Value 60 90 0.8 Unit mA mW mW/C Document Number 83620 Rev. 1.4, 22-Apr-04 www.vishay.com 1 IL256AT Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Power dissipation Derate linearly from 25 C Test condition Symbol BVCEO BVECO BVCBO Pdiss Value 30 5.0 70 150 2.0 VISHAY Unit V V V mW mW/C Coupler Parameter Total package dissipation (LED + detector) Derate linearly from 25 C Storage temperature Operating temperature Soldering time at 260 C Tstg Tamb Test condition Symbol Ptot Value 240 3.2 - 55 to + 150 - 55 to + 100 10 Unit mW mW/C C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF = 10 mA Symbol VF Min Typ. 1.2 Max 1.5 Unit V Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Collector-emitter leakage current Test condition IC = 1.0 mA IE = 100 A IC = 100 A VCE = 10 V Symbol BVCEO BVECO BVCBO ICEO Min 30 5.0 70 Typ. 50 10 90 5.0 50 Max Unit V V V nA Coupler Parameter Saturation voltage, collectoremitter Isolation voltage, input to output Test condition IF = 16 mA, IC = 2.0 mA Symbol VCEsat VISO 3000 Min Typ. Max 0.4 Unit V VRMS Current Transfer Ratio Parameter DC Current Transfer Ratio Symmetry (CTR at + 10 mA)/ (CTR at -10 mA) Test condition IF = 10 mA, VCE = 5.0 V Symbol CTRDC Min 20 0.5 1.0 2.0 Typ. Max Unit % www.vishay.com 2 Document Number 83620 Rev. 1.4, 22-Apr-04 VISHAY Typical Characteristics (Tamb = 25 C unless otherwise specified) 60 I F - LED Forward Current - mA IL256AT Vishay Semiconductors 2.0 85C Normalized CTR 40 20 0 -20 -40 -60 -1.5 -1.0 -0.5 0.0 25C 1.5 -55C 1.0 No rm aliz ed to: IF = 10 mA, V CE =10 V T A = 25C T A = 25C T A = 50C T A = 70C T A = 100C 0.5 0.5 1.0 1.5 iIL256AT_04 0.0 .1 1 10 IF - LED Current - mA 100 iIL256AT_01 V F - LED Forward Voltage - V Fig. 1 LED Forward Current vs.Forward Voltage Fig. 4 Normalized CTR vs. IF and Tamb 1.4 1.3 V F - Forward Voltage - V 1.0 0.8 Normalized CTR TA = -55C 1.2 1.1 1.0 0.9 TA = 100C 0.8 0.7 .1 1 10 100 iIL256AT_05 TA = 25C 0.6 0.4 0.2 0.0 .1 T A = 25C T A = 50C T A = 70C T A = 100C V CE(sat) =0.4 V No rm aliz ed to: IF = 10 mA, V CE =10 V T A = 25C 1 10 100 iIL256AT_02 I F - Forward Current - mA IF - LED Current - mA Fig. 2 Forward Voltage vs. Forward Current Fig. 5 Normalized Saturated CTR 10000 If(pk) - Peak LED Current - mA 1.5 Duty F actor Normalized CTRcb No rm aliz ed to: IF = 10 mA t DF = /t 1000 100 .005 .01 .02 .05 .1 .2 .5 1.0 0.5 T A = 25C T A = 50C T A = 70C 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t - LED Pulse Duration - s 0.0 .1 iIL256AT_06 1 10 100 IF - LED Current - mA iIL256AT_03 Fig. 3 Peak LED Current vs. Duty Factor, Tau Fig. 6 Normalized CTRcb Document Number 83620 Rev. 1.4, 22-Apr-04 www.vishay.com 3 IL256AT Vishay Semiconductors VISHAY 1000 Normalized Saturated HF 1.5 25C Normalized to: HFE at VCE = 10 V ICB = 10 A 1.0 T A = -20C T A = 25C T A = 50C T A = 70C V CE(sat) = 0.4 V ICB - Photocurrent - A 100 70C 10 0.5 1 .1 .1 iIL256AT_07 0.0 1 10 100 iIL256AT_10 1 10 100 1000 IF - LED Current - mA IB - Base Current - A Fig. 7 Photocurrent vs. LED Current Fig. 10 Normalized Saturated HFE vs. Base Current 700 VCE = 0.4 V 600 HFE - Transistor Gain 100 1000 100 IF - LED Current - mA IB - Base Current - A 500 400 300 200 100 1 10 10 1 .1 .01 .001 1 iIL256AT_08 10 100 IB - Base Current - A .1 1000 iIL256AT_11 0.4 0.5 0.6 0.7 0.8 VBE - Base Emitter Voltage - V Fig. 8 Base Current vs. IF and HFE Fig. 11 Base Emitter Voltage vs. Base Current 1.2 ICEO - Collector-Emitter - nA 10 5 No rm aliz ed to: IB = 10 A 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Typical VCE = 10 V 1.0 Normalized HFE V CE = 10 NHFE -20C NHFE 25C NHFE 50C NHFE 70C 0.8 0.6 0.4 1 iIL256AT_09 10 100 1000 IB - Base Current - A TA - Ambient Temperature - C iIL256AT_12 Fig. 9 Normalized HFE vs. Base Current and Temp. Fig. 12 Collector-Emitter Leakage Current vs.Temp. www.vishay.com 4 Document Number 83620 Rev. 1.4, 22-Apr-04 VISHAY Package Dimensions in Inches (mm) .120.002 (3.05.05) R .010 (.13) .240 (6.10) C .154.002 L (3.91.05) .050 (1.27) .014 (.36) .036 (.91) .170 (4.32) .260 (6.6) Pin One I.D. .230.002 (5.84.05) .016 (.41) .015.002 (.38.05) 40 7 .0585.002 (1.49.05) .045 (1.14) IL256AT Vishay Semiconductors ISO Method A .004 (.10) .008 (.20) .008 (.20) 5 Max. R.010 (.25) Max. .125.002 (3.18.05) .050(1.27) Typ. .040 (1.02) i178020 .020.004 (.51.10) 2 Plcs. Lead coplanarity .001 Max. Document Number 83620 Rev. 1.4, 22-Apr-04 www.vishay.com 5 IL256AT Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83620 Rev. 1.4, 22-Apr-04 |
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